IEEE journal of solid-state circuits, 2009-07, Vol.44 (7), p.2002-2009
2009
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Details
- Autor(en) / Beteiligte
- Titel
- A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios
- Ist Teil von
- IEEE journal of solid-state circuits, 2009-07, Vol.44 (7), p.2002-2009
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Xplore Digital Library
- Beschreibungen/Notizen
- The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3sigma) over the temperature range from -22degC to 85degC . Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm 2 and draws 34 muA from a 1.2 V supply at room temperature.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9200eISSN: 1558-173XDOI: 10.1109/JSSC.2009.2020247Titel-ID: cdi_ieee_primary_5109783
- Format
- –
- Schlagworte
- Calibration, Charge carrier mobility, Circuits, CMOS, CMOS analog integrated circuits, CMOS technology, crystal-less clock, Electron mobility, Energy consumption, Frequency synchronization, low voltage, Metal oxide semiconductors, MOSFETs, Networks, Oscillators, relaxation oscillators, Remote sensors, Semiconductor devices, Silicon, Spreads, Temperature sensors, ultra-low power, Wireless networks, Wireless sensor networks