Details

Autor(en) / Beteiligte

• Keeman Kim
• Bumsoo Han
• Kihun Joh
• Sungmyun Kim
• Byungmun Kim
• Heunggyu Park
• Jongpil Park
• Jinsoo Kim
• Wongu Kang
• Kyungwoo Kang
• Yuri Kim
• Sangil Lee
• Younghee Kim

Titel

Design of 1.2 GeV synchrotron light source for X-ray lithography at Samsung Heavy Industries

Ist Teil von

• Proceedings Particle Accelerator Conference, 1995, Vol.1, p.269-271 vol.1

Ort / Verlag

IEEE

Erscheinungsjahr

1995

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• An 1.2 GeV electron storage ring being designed at Samsung Heavy Industries Daeduk R&D Center is optimized for X-ray lithography works for high density semiconductor devices and micro-machining. The lattice is a variation of a FODO arrangement with four quadrupole doublets. The circumference of 57.6 m includes four 2.1-m-long straight sections and two 3.09-m-long dispersion-free straight sections making the synchrotron a racetrack shape. Two dispersion-free straight sections are located between the doublets and reserved for diagnostics and insertion devices. The harmonic number is 96 and the corresponding RF frequency is 449.654 MHz. The critical X-ray wavelength from sixteen 1.16-m-long bending magnets is 9.55 /spl Aring/ and a superconducting wiggler is also included in the design considerations. The major features of the light source will be described.