IEEE transactions on magnetics, 1996-03, Vol.32 (2), p.520-526
1996
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Details
- Autor(en) / Beteiligte
- Titel
- Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect
- Ist Teil von
- IEEE transactions on magnetics, 1996-03, Vol.32 (2), p.520-526
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 1996
- Quelle
- IEEE/IET Electronic Library
- Beschreibungen/Notizen
- We found that in a weakly coupled giant magnetoresistive (GMR) sandwich the small-field response's slope is dependent on its past magnetic history. Based on this storage mechanism, we designed a binary solid state memory element. Simulation results show that it operates on the general principle of storing a binary digit in the hard component and sensing nondestructively its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered, thereby causing a dramatic GMR polar readout. So far a 1-b experimental apparatus has been realized.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9464eISSN: 1941-0069DOI: 10.1109/20.486542Titel-ID: cdi_ieee_primary_486542
- Format
- –
- Schlagworte
- Applied sciences, Couplings, Electronics, Exact sciences and technology, Giant magnetoresistance, History, Magnetic devices, Magnetic switching, Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.), domain-motion devices, etc, Magnetization, Road transportation, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Solid modeling, Solid state circuits, Turning