Details

Autor(en) / Beteiligte

• MacDougal, M.H.
• Gye Mo Yang
• Bond, A.E.
• Chao-Kun Lin
• Tishinin, D.
• Dapkus, P.D.

Titel

Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors

Ist Teil von

• IEEE photonics technology letters, 1996-03, Vol.8 (3), p.310-312

Ort / Verlag

IEEE

Erscheinungsjahr

1996

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSELs) which use oxide-based distributed Bragg reflectors (DBRs) on both sides of the gain region. They require a third the epitaxial growth time of VCSELs with semiconductor DBRs. We obtain threshold currents as low as 160 μA in VCSELs with an active area of 8 μm×8 μm using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 μA.