Details

Autor(en) / Beteiligte

• Kamiyama, S.
• Ishikawa, D.
• Kurosawa, E.
• Nakata, H.
• Kitajima, M.
• Ootuka, M.
• Aoyama, T.
• Nara, Y.
• Ohji, Y.

Titel

Systematic Study of Vth controllability using ALD-Y2O3, La2O3, and MgO2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices

Ist Teil von

• 2008 IEEE International Electron Devices Meeting, 2008, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2008

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• We present a systematic examination of V th controllability using Y 2 O 3 , La 2 O 3 , and MgO 2 layers by atomic-layer-deposition (ALD) technology with HfSiON/TaSiN gate first stacks for half-pitch (hp) 32 nm-node metal gated bulk devices. By employing base-Y 2 O 3 layers of 1 mono-layer (ML< 0.5 nm), ultra-thin equivalent-oxide-thickness (EOT: 0.72 nm) can be achieved with excellent V th controllability (|DeltaV th |> 130 mV), high electron carrier mobility, and very high drain current (> 1100 muA/mum) at a low I off value (100 nA/mum). Moreover, the positive-bias-temperature-instability (PBTI) over a 10-year lifetimes can be readily achieved with V g = +1.0 V at 125degC.