IEEE photonics technology letters, 2009-04, Vol.21 (8), p.528-530
2009
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Details
- Autor(en) / Beteiligte
- Titel
- Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55- \mu m Quantum-Dash Lasers
- Ist Teil von
- IEEE photonics technology letters, 2009-04, Vol.21 (8), p.528-530
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous-wave operation up to 100degC with a characteristic temperature of 88 K between 25degC and 85degC and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85degC. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1041-1135eISSN: 1941-0174DOI: 10.1109/LPT.2009.2014076Titel-ID: cdi_ieee_primary_4773200
- Format
- –
- Schlagworte
- Amplitude modulation, Bandwidth, Conferences, Fiber optics, Frequency, Gas lasers, Henry factor, High speed, Lasers, linewidth enhancement factor (LEF), Modulation, modulation bandwidth, Optical fibers, Power generation, Power lasers, quantum dash (QDash), quantum dot (QD), Quantum dot lasers, quantum-dash laser, Temperature, Threshold current, Thresholds, Waveguide lasers