Details

Autor(en) / Beteiligte

• Lamy, J.M.
• Paranthoen, C.
• Levallois, C.
• Nakkar, A.
• Folliot, H.
• Dehaese, O.
• Le Corre, A.
• Loualiche, S.
• Castany, O.
• Dupont, L.

Titel

InAs quantum wires on InP substrate for VCSEL applications

Ist Teil von

• 2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2008

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 mum photoluminescence along the crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along, an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL devices.