Details

Autor(en) / Beteiligte

• Moyer, H.P.
• Kurdoghlian, A.
• Micovic, M.
• Lee, T.
• Hiramoto, R.O.
• Be Zaire, M.J.
• Nguyen, S.
• Hashimoto, P.
• Schmitz, A.
• Milosavljevic, I.
• Willadsen, P.J.
• Wong, W.-S.
• Antcliffe, M.
• Wetzel, M.D.
• Hu, M.

Titel

Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process

Ist Teil von

• 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2008

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• We report a robust Q-band GaN MMIC LNA operating in the 42-47GHz frequency range using a 0.15 mum T-gate process. The measured noise figure of the MMIC is less than 3.1 dB over the band of interest and the NF has a minimum of 2.9 dB at a frequency of 45.5 GHz. The MMIC gain is between 19 and 20 dB across the band and the input return loss of the MMIC is less than -10 dB. The measured OIP3 of the MMIC is 28 dBm at 45 GHz. The 3 stage MMIC is 2.5times1.3 mm 2 and consumes less than 400 mW. To the authors knowledge this is the best combination of RF GaN performance at Q-band and the first reported GaN MMIC LNA in this frequency band.