Details

Autor(en) / Beteiligte

• Moquillon, L.
• Garcia, P.
• Pruvost, S.
• Le Tual, S.
• Marchetti, M.
• Chabert, L.
• Bertholet, N.
• Scuderi, A.
• Scaccianoce, S.
• Serratore, A.
• Piazzese, N.
• Dehos, C.
• Morche, D.

Titel

Low-cost fully integrated BiCMOS transceiver for pulsed 24-GHz automotive radar sensors

Ist Teil von

• 2008 IEEE Custom Integrated Circuits Conference, 2008, p.475-478

Ort / Verlag

IEEE

Erscheinungsjahr

2008

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• This work presents the performance of a 24-GHz transceiver for automotive short-range radar. Complying with the pulsed radar sensor requirements, this single-chip is the first silicon realization with this high-level of integration. The single-chip results were obtained at 24 GHz using a standard 0.13 mum BiCMOS SiGe 170 GHz f T featuring 1.7 V BVceo. This allows a receive path of 47 dB gain with 3 dB DSB noise figure providing a dynamic range of 31 dB. In the transmission section, 1-ns pulses modulated at 24 GHz are also obtained using an RF switch, which is able to deliver a continuous wave output power of 0 dBm.