2008 IEEE Radiation Effects Data Workshop, 2008, p.64-68
2008
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Details
- Autor(en) / Beteiligte
- Titel
- Total Dose and Single Event Effect Characterization of ECL Devices
- Ist Teil von
- 2008 IEEE Radiation Effects Data Workshop, 2008, p.64-68
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- Radiation and SEE susceptibility of ECL devices manufactured by ON-semiconductor was studied. Test data shows that these devices are highly susceptible to single event transients and upsets when bombarded with heavy ions.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 142442545X, 9781424425457ISSN: 2154-0519eISSN: 2154-0535DOI: 10.1109/REDW.2008.18Titel-ID: cdi_ieee_primary_4638616
- Format
- –
- Schlagworte
- Aluminum, Ions, Performance evaluation, Radiation effects, Temperature measurement, Testing, Transient analysis