2008 9th International Workshop and Tutorials on Electron Devices and Materials, 2008, p.45-47
2008
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Details
- Autor(en) / Beteiligte
- Titel
- Monte Carlo simulation of phase separation in SiOx layers
- Ist Teil von
- 2008 9th International Workshop and Tutorials on Electron Devices and Materials, 2008, p.45-47
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE/IET Electronic Library (IEL)
- Beschreibungen/Notizen
- Results of Monte Carlo simulation of SiO x (0 les x les 1) layers annealing are presented. After annealing SiO x layers exhibit a tendency to pore formation. These pores separate fragments of well-ordered stochiometric dioxide matrix and silicon phase. Excess silicon precipitates in the pores in nanocrystal form.
- Sprache
- Englisch
- Identifikatoren
- ISBN: 9785778208933, 5778208936ISSN: 1815-3712DOI: 10.1109/SIBEDM.2008.4585842Titel-ID: cdi_ieee_primary_4585842
- Format
- –
- Schlagworte
- Annealing, Atomic layer deposition, Lattices, Monte Carlo, Monte Carlo methods, Nanocrystals, Silicon, Simulation, SiO x layers nanocrystals, Substrates