Details

Autor(en) / Beteiligte

• Sevcenco, A.
• Brezeanu, G.
• Badila, M.
• Draghici, F.
• Rusu, I.
• Visoreanu, A.

Titel

Experimental Validation of a Simple Analytical Model for the Electrical Behaviour of Nanoscale MOSFETs

Ist Teil von

• 2007 International Semiconductor Conference, 2007, Vol.2, p.551-554

Ort / Verlag

IEEE

Erscheinungsjahr

2007

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is proven to be accurate in all predictions regarding the effect of velocity saturation on the parameters of nanoscale MOSFET: transconductance, transitions currents, etc. Experimental transfer characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries.