IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1027-1034
2008
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Details
- Autor(en) / Beteiligte
- Titel
- Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High- \kappa Gate Dielectrics
- Ist Teil von
- IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1027-1034
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- In this paper, we describe a systematic study of the electrical properties of low-temperature-compatible p-channel polycrystalline-silicon thin-film transistors (poly-Si TFTs) using HfO 2 and HfSiO x , high-k gate dielectrics. Because of their larger gate capacitance density, the TFTs containing the high-k gate dielectrics exhibited superior device performance in terms of higher I on /I off current ratios, lower subthreshold swings (SSs), and lower threshold voltages (V th ), relative to conventional deposited-SiO 2 , albeit with slightly higher OFF-state currents. The TFTs incorporating HfSiO x , as the gate dielectric had ca. 1.73 times the mobility (mu FE ) relative to that of the deposited-SiO 2 TFTs; in contrast, the HfO 2 TFTs exhibited inferior mobility. We investigated the mechanism for the mobility degradation in these HfO 2 TFTs. The immunity of the HfSiO x , TFTs was better than that of the HfO 2 TFTs-in terms of their V th shift, SS degradation, mu FE degradation, and drive current deterioration-against negative bias temperature instability stressing. Thus, we believe that HfSiO x , rather than HfO 2 , is a potential candidate for use as a gate-dielectric material in future high-performance poly-Si TFTs.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9383eISSN: 1557-9646DOI: 10.1109/TED.2008.916759Titel-ID: cdi_ieee_primary_4461118
- Format
- –
- Schlagworte
- Acoustic wave devices, piezoelectric and piezoresistive devices, Applied sciences, Dielectrics, Electronics, Exact sciences and technology, Hafnium silicate (\hbox{HfSiO}_{x}), high dielectric constant (high- kappa ), Logic gates, negative bias temperature instability (NBTI), polycrystalline-silicon thin-film transistors (poly-Si TFTs), Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Silicon, Stress, Temperature measurement, Thin film transistors, Transistors