Details

Autor(en) / Beteiligte

• Maslar, J.E.
• Hurst, W.S.
• Burgess, D.R.
• Kimes, W.A.
• Nguyen, N.V.
• Moore, E.F.

Titel

In situ gas phase infrared absorption measurements during hafnium oxide atomic layer deposition

Ist Teil von

• 2007 International Semiconductor Device Research Symposium, 2007, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2007

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this work, measurements were performed in a single-wafer, warm-wall, horizontal-flow reactor. Additional design characteristics of this reactor include optical access near the wafer surface, good gas flow characteristics (facilitating reproducible high quality film growth), and an aluminum body (facilitating maintenance of a uniform wall temperature).