Details

Autor(en) / Beteiligte

• Lee, R.T.-P.
• Koh, A.T.-Y.
• Fang-Yue Liu
• Wei-Wei Fang
• Tsung-Yang Liow
• Kian-Ming Tan
• Poh-Chong Lim
• Lim, A.E.-J.
• Ming Zhu
• Keat-Mun Hoe
• Chin-Hang Tung
• Guo-Qiang Lo
• Xincai Wang
• Low, D.K.-Y.
• Samudra, G.S.
• Dong-Zhi Chi
• Yee-Chia Yeo

Titel

Route to Low Parasitic Resistance in MuGFETs with Silicon-Carbon Source/Drain: Integration of Novel Low Barrier Ni(M)Si:C Metal Silicides and Pulsed Laser Annealing

Ist Teil von

• 2007 IEEE International Electron Devices Meeting, 2007, p.685-688

Ort / Verlag

IEEE

Erscheinungsjahr

2007

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the electron barrier height by 38% on SiC. Device integration of the Ni(Dy)Si:C contacts provides a 30% reduction in series resistance leading to improved I Dsat performance. Second, we also report the first demonstration of pulsed laser annealing (PLA) for MuGFETs with Si:C S/D for enhanced dopant activation, leading to ~50% lower series resistance. High carbon substitutional concentration (above 1.0%) in Si:C can be achieved with PLA for enhanced strain effects.