Details

Autor(en) / Beteiligte

• Kawano, Y.
• Suzuki, T.
• Nakasha, Y.
• Hirose, T.
• Joshin, K.

Titel

A 25-GHz, 40-mW Fully-Integrated Power Amplifier in Standard 90-nm Si-CMOS Technology

Ist Teil von

• 2007 Korea-Japan Microwave Conference, 2007, p.17-20

Ort / Verlag

IEEE

Erscheinungsjahr

2007

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• A 25-GHz, 40-mW power amplifier with SO-Ωinput and output matching circuit in standard 90-nm Si-CMOS technology is reported. The supply voltage of 3.3V is compatible with that of conventional wireless communication systems. To enable this, a stacked cascode configuration with a Vdd = 1.2V transistor and a Vdd = 3.3V thick oxide transistor for digital I/O interfaces is used. The power amplifier with the total gate width of 640 mum achieves a linear gain of 5 dB and single-ended output power of more than 16dBm. The chip size is 1.0×0.85 mm 2 .