Details

Autor(en) / Beteiligte

• Ille, A.
• Stadler, W.
• Pompl, T.
• Gossner, H.
• Brodbeck, T.
• Esmark, K.
• Riess, P.
• Alvarez, D.
• Chatty, K.
• Gauthier, R.
• Bravaix, A.

Titel

Reliability aspects of gate oxide under ESD pulse stress

Ist Teil von

• 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2009, Vol.49 (12), p.6A.1-1-6A.1-10

Ort / Verlag

IEEE

Erscheinungsjahr

2009

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Power law time-to-breakdown voltage acceleration is investigated down to ultra-thin oxides (1.1 nm) in the ESD regime in inversion and accumulation. Breakdown modes, oxide degradation and device drifts under ESD like stress are discussed as function of the oxide thickness. The consequent impacts on the ESD design window are presented.