Details

Autor(en) / Beteiligte

• Stewart, E.J.
• Clarke, R.C.
• McCoy, M.J.
• McNutt, T.R.
• Hearne, H.C.
• Walker, A.P.
• Van Campen, S.D.
• Bates, G.M.
• Leslie, S.
• DeSalvo, G.C.

Titel

8 kV Normally-off All-SiC Cascode Power Switch Using VJFETs

Ist Teil von

• Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.85-87

Ort / Verlag

IEEE

Erscheinungsjahr

2007

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We demonstrate an 8 kV, 3 A cascode power switch using SiC VJFETs for both the normally-on and normally-off devices. The normally-on SiC VJFETs have blocking voltages greater than 8 kV at V GS =-50 V pinch-off voltage and on-state currents of more than 4 A at V GS =0 V. The normally-off SiC VJFETs block 70 V (V GS =0 V) and can drive >2 A/device with positive gate voltage (V GS =2.5 V). The VJFETs were combined into a module to create the 8 kV all-SiC cascode switch that blocks 8 kV normally-off and drives 3 A of on-state current. Preliminary switching measurements show very fast rise and fall times.