Details

Autor(en) / Beteiligte

• Yater, J.A.
• Kang, S.T.
• Steimle, R.
• Hong, C.
• Winstead, B.
• Herrick, M.
• Chindalore, G.

Titel

Optimization of 90nm Split Gate Nanocrystal Non-Volatile Memory

Ist Teil von

• 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, 2007, p.77-78

Ort / Verlag

IEEE

Erscheinungsjahr

2007

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• A 90 nm split gate nanocrystal bitcell has been demonstrated with scaled select gate oxide and adjustable control gate threshold voltage that allows for fast, low power SSI operation and top erase. This bitcell performance is excellent and holds promise for embedded flash applications.