Details

Autor(en) / Beteiligte

• Marukame, T.
• Ishikawa, T.
• Kijima, H.
• Sekine, W.
• Matsuda, K.
• Uemura, T.
• Yamamoto, M.

Titel

Highly spin-polarized tunneling in fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier

Ist Teil von

• INTERMAG 2006 - IEEE International Magnetics Conference, 2006, p.723-723

Ort / Verlag

IEEE

Erscheinungsjahr

2006

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• In this study, we fabricated fully epitaxial MTJs using a CCFA thin film with an improved film composition and a wedge-shaped MgO tunnel barrier. We then investigated the junctions' TMR characteristics.The high TMR ratios provided direct evidence of the high spin polarization of full-Heusler alloy CCFA thin films. These results confirm the promise of epitaxial Co-based full-Heusler alloy thin films of Co 2 Cr 0.6 Fe 0.4 Al as a source of highly spin-polarized current in spintronic devices.