Details

Autor(en) / Beteiligte

• Oh, J.H.
• Park, J.H.
• Lim, Y.S.
• Lim, H.S.
• Oh, Y.T.
• Kim, J.S.
• Shin, J.M.
• Song, Y.J.
• Ryoo, K.C.
• Lim, D.W.
• Park, S.S.
• Kim, J.I.
• Kim, J.H.
• Yu, J.
• Yeung, F.
• Jeong, C.W.
• Kong, J.H.
• Kang, D.H.
• Koh, G.H.
• Jeong, G.T.
• Jeong, H.S.
• Kinam Kim

Titel

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Ist Teil von

• 2006 International Electron Devices Meeting, 2006, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2006

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Fully functional 512Mb PRAM with 0.047mum 2 (5.8F 2 ) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2 Sb 2 Te 5 . The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85degC