Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
A Compact Quantum-Mechanical Model for Double-Gate MOSFET
Ist Teil von
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1272-1274
Erscheinungsjahr
2006
Quelle
IEEE Electronic Library Online
Beschreibungen/Notizen
A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2D simulation results well. This indicates that both V th shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as N body , T si , T ox , etc