Details

Autor(en) / Beteiligte

• Chung-Hsun Lin
• Dunga, M.V.
• Niknejad, A.M.
• Chenming Hu

Titel

A Compact Quantum-Mechanical Model for Double-Gate MOSFET

Ist Teil von

• 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1272-1274

Erscheinungsjahr

2006

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2D simulation results well. This indicates that both V th shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as N body , T si , T ox , etc