IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3681-3686
2006
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Details
- Autor(en) / Beteiligte
- Titel
- Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors
- Ist Teil von
- IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3681-3686
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2006
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- Results of displacement damage correlation between neutrons, light ions and heavy ions in bipolar junction transistors are presented. Inverse gain degradation as the function of fluence was measured. The inverse gain degradation due to heavy ion irradiation followed the Messenger-Spratt equation, while some deviation was found for light ions
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9499eISSN: 1558-1578DOI: 10.1109/TNS.2006.886231Titel-ID: cdi_ieee_primary_4033249
- Format
- –
- Schlagworte
- Damage, Damage equivalence, Degradation, Equations, Gain, Gain measurement, Heavy ions, Inverse, Ion beams, Junction transistors, Laboratories, Light ions, Mathematical analysis, Neutrons, Particle beams, Protons, Pulse measurements, Semiconductor devices, Silicon, silicon bipolar transistor