Details

Autor(en) / Beteiligte

• Cunningham, T.J.
• Gee, R.C.
• Fossum, E.R.
• Baier, S.M.

Titel

Deep cryogenic noise and electrical characterization of the complementary heterojunction field-effect transistor (CHFET)

Ist Teil von

• IEEE transactions on electron devices, 1994-06, Vol.41 (6), p.888-894

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1994

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• This paper discusses a characterization at 4 K of the complementary heterojunction field-effect transistor (CHFET), to examine its suitability for deep cryogenic (<10 K) readout electronics applications. The CHFET is a GaAs-based transistor analogous in structure and operation to silicon CMOS. The electrical properties including the gate leakage current, subthreshold transconductance, and input-referred noise voltage were examined. It is shown that both n-channel and p-channel CHFET's are fully functional at 4 K, with no anomalous behavior, such as hysteresis or kinks. Complementary circuit designs are possible, and a simple CHFET-based multiplexed op-amp is presented and characterized at 4 K. The noise and gate leakage current of the CHFET are presently several orders of magnitude too large for readout applications, however. The input-referred noise is on the order of 1 /spl mu/V//spl radic/(Hz) at 100 Hz for a 50/spl times/50 /spl mu/m n-channel CHFET. The gate current is strongly dependent on the doping at the gate edge, and is on the order of 10/sup -14/ A for a 10/spl times/10 /spl mu/m/sup 2/ n-channel CHFET with light gate-edge region doping.< >