Details

Autor(en) / Beteiligte

• Bour, D.P.
• Treat, D.W.
• Beernink, K.J.
• Krusor, B.S.
• Geels, R.S.
• Welch, D.F.

Titel

610-nm band AlGaInP single quantum well laser diode

Ist Teil von

• IEEE photonics technology letters, 1994-02, Vol.6 (2), p.128-131

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1994

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• The short-wavelength limits of AlGaInP visible laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, and Ga/sub x/In/sub 1/spl minus/x/P single quantum well (QW) active regions are investigated. Good performance is maintained throughout the 620 nm band, but the characteristics rapidly degrade in the 610 nm band. Biaxial-compression and -tension were compared, with the case of tension yielding slightly better performance. Using a 25 /spl Aring/ Ga/sub 0.45/In/sub 0.55/P QW, a wavelength of 614 nm was obtained, while a 50 /spl Aring/ Ga/sub 0.6/In/sub 0.4/P QW emitted at 620 nm with a threshold current density of 0.8 kA/cm/sup 2/. These results with thin single QWs indicate the effectiveness of using an Al/sub 0.5/In/sub 0.5/P cladding layer to reduce electron leakage.< >