Details

Autor(en) / Beteiligte

• Bahl, S.R.
• Bennett, B.R.
• del Alamo, J.A.

Titel

A high-voltage, doubly-strained In/sub 0.41/Al/sub 0.59/As/n/sup +/-In/sub 0.65/Ga/sub 0.35/As HFET

Ist Teil von

• LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.222-225

Ort / Verlag

IEEE

Erscheinungsjahr

1992

Quelle

IEEE Xplore

Beschreibungen/Notizen

• An InAlAs/n/sup +/-InGaAs HFET (heterostructure field-effect transistor) on InP, suitable for power microwave applications, was designed and fabricated. A strained In/sub 0.65/Ga/sub 0.35/As channel is optimally doped to N/sub D/=6*10/sup 18/ cm/sup -3/. The heterostructure employs the following methodology to enhance device breakdown: (1) an ultrathin subchannel to introduce quantization and increase the effective channel bandgap, (2) a strained In/sub 0.41/Al/sub 0.59/As insulator, and (3) the elimination of parasitic mesasidewall gate-leakage. The resulting device (gate length=1.9 mu m, gate width=200 mu m) has a cutoff frequency=14.9 GHz, a maximum frequency of oscillation=101 GHz, breakdown voltage=12.8 V, and maximum drain current=302 mA/mm.< >