Details

Autor(en) / Beteiligte

• Nguyen, B.-Y.
• Zhang, D.
• Thean, A.
• Grudowski, P.
• Vartanian, V.
• White, T.
• Zollner, S.
• Theodore, D.
• Goolsby, B.
• Desjardins, H.
• Prabhu, L.
• Garcia, R.
• Hackenberg, J.
• Dhandapani, V.
• Murphy, S.
• Rai, R.
• Conner, J.
• Montgomery, P.
• Parker, C.
• Hildreth, J.
• Noble, R.
• Jahanbani, M.
• Eades, D.
• Cheek, J.
• White, B.
• Mogab, J.
• Venkatesan, S.

Titel

Uniaxial and Biaxial Strain for CMOS Performance Enhancement

Ist Teil von

• 2006 International SiGe Technology and Device Meeting, 2006, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2006

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Uniaxial stressors have been mainly employed for boosting PMOS performance, while it is more difficult to increase NMOS performance using tensile stressors. This results in changing the n:p ratio, which requires circuit layout changes. Enhancing both NMOS and PMOS performance to retain the same n:p ratio is desirable. Interactions between biaxial lattice strain, uniaxial relaxation, process-induced stressor and channel orientation have been optimized to achieve the desired stress configurations for enhancing both short-channel SSOI NMOS and PMOS devices