Details

Autor(en) / Beteiligte

• Jenkins, P.
• Landis, G.A.
• Weinberg, I.
• Kneisel, K.

Titel

Minority carrier lifetime in indium phosphide

Ist Teil von

• The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991, 1991, p.177-181 vol.1

Ort / Verlag

IEEE

Erscheinungsjahr

1991

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Transient photoluminescence has been used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material.< >