Details

Autor(en) / Beteiligte

• Posseme, N.
• Maurice, C.
• Brun, Ph
• Oilier, E.
• Guillermet, M.
• Verove, C.
• Berger, T.
• Fox, T.
• Hinsinger, O.

Titel

New etch challenges for the 65-nm technology node Low-k integration using An enhanced Trench First Hard Mask architecture

Ist Teil von

• 2006 International Interconnect Technology Conference, 2006, p.36-38

Ort / Verlag

IEEE

Erscheinungsjahr

2006

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper, an enhanced trench first hard mask (TFHM) 300mm low-k backend integration is studied for the 65nm technology node. This new integration scheme leads to new etch challenge (selectivity, residues or hard mask faceting). An approach change from full via to partial via has been evaluated. Electrical data have also shown a yield improvement for this enhanced integrated TFHM with regard to traditional TFHM