Details

Autor(en) / Beteiligte

• Qiqing Ouyang
• Kai Xiu

Titel

Simulation Study of Reduced Self-Heating in Novel Thin-SOI Vertical Bipolar Transistors

Ist Teil von

• 2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.55-58

Ort / Verlag

IEEE

Erscheinungsjahr

2005

Quelle

IEL

Beschreibungen/Notizen

• Simulations have been performed to study the self-heating in thin-SOI, vertical bipolar transistors for the first time. Two new device structures are proposed and the simulations show that they can improve the heat dissipation significantly. By adding a heat sink connecting the collector and the substrate and/or having a thin localized BOX underneath the SOI collector, self-heating can be reduced substantially without increasing device area or degrading device performance.