Details

Autor(en) / Beteiligte

• Zhao, E.
• El-Diwany, M.
• Cressler, J.D.
• Shibley, J.
• Sadovnikov, A.
• Kocoski, D.
• Krakowski, T.L.

Titel

On the optimization of lateral pnp BJTs found in BiCMOS process technologies

Ist Teil von

• Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.216-219

Ort / Verlag

IEEE

Erscheinungsjahr

2005

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We present a comprehensive investigation aimed at optimizing the performance of lateral pnp BJTs found in BiCMOS technologies to a level suitable for analog, IF/RF circuit applications. Alternative base profiles, LDD implantations conditions, and device geometries are quantitatively assessed, as well as the path of adapting low-voltage (LV) pMOS vs. high-voltage (HV) pMOS device design points for viable lateral pnp BJTs. The resultant dc, ac and low-frequency noise characteristics are addressed.