Details

Autor(en) / Beteiligte

• Song, Y.J.
• Park, J.H.
• Lee, S.Y.
• Jae-Hyun Park
• Hwang, Y.N.
• Lee, S.H.
• Ryoo, K.C.
• Ahn, S.J.
• Jeong, C.W.
• Shin, J.M.
• Jeong, W.C.
• Koh, K.H.
• Jeong, G.T.
• Jeong, H.S.
• Kim, K.N.

Titel

Advanced ring type contact technology for high density phase change memory

Ist Teil von

• Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.513-516

Ort / Verlag

IEEE

Erscheinungsjahr

2005

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Advanced bottom electrode contact (BEC) scheme was successfully developed for fabricating reliable high density 64 Mb PRAM by using ring type contact scheme. This advanced ring type BEC scheme was prepared by depositing very thin TiN films inside a contact hole, and then core dielectrics was uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce a reset current with low set resistance, and also maintain a uniform cell distribution. Thus, it is clearly demonstrated that the ring type BEC technology can exhibit strong feasibility of high density 256 Mb PRAM and beyond.