Details

Autor(en) / Beteiligte

• Beling, A.
• Bach, H.-G.
• Mekonnen, G.G.
• Kunkel, R.
• Schmidt, D.

Titel

Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity

Ist Teil von

• IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2152-2154

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2005

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented. In order to maintain a high quantum efficiency, an optical matching layer exploiting mode beating effects is employed. Its optimization leads to a twofold enhanced external responsivity of 0.5 A/W at 1.55-μm wavelength in accordance with simulation. The reduced p-n junction capacitance enables 3-dB bandwidths up to 120 GHz mainly limited due to carrier transit time effects.