Details

Autor(en) / Beteiligte

• Jeong, G.T.
• Hwang, Y.N.
• Lee, S.H.
• Lee, S.Y.
• Ryoo, K.C.
• Park, J.H.
• Song, Y.J.
• Ahn, S.J.
• Jeong, C.W.
• Kim, Y.-T.
• Horii, H.
• Ha, Y.H.
• Koh, G.H.
• Jeong, H.S.
• Kinam Kim

Titel

Process technologies for the integration of high density phase change RAM

Ist Teil von

• 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, 2005, p.19-22

Ort / Verlag

IEEE

Erscheinungsjahr

2005

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory - scalability, write/read speed and reliability. The process technologies for the integration of high density PRAM are reviewed. The most important challenge of PRAM is the reduction of writing current. Various approaches to reduce the writing current are reviewed and other key factors for the high density PRAM are discussed.