Details

Autor(en) / Beteiligte

• Mitzi, D.B.
• Milliron, D.J.
• Copel, M.
• Murray, C.
• Kosbar, L.

Titel

High mobility solution-deposited chalcogenide films for flexible applications

Ist Teil von

• IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.41-44

Ort / Verlag

IEEE

Erscheinungsjahr

2005

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm/sup 2//V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe/sub 2-x/S/sub x/, In/sub 2/Se/sub 3/ and p-type CuInSe/sub 2-x/S/sub x/ TFT channels have been deposited by spin coating from hydrazine- and nonhydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm/sup 2//V-s and 10/sup 6/, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices.