Details

Autor(en) / Beteiligte

• Changsoo Hong
• Milor, L.
• Lin, M.Z.
• Hsu, W.M.
• Yeng Peng

Titel

Fast reliability evaluation of backend dielectrics using lifetime prediction techniques at wafer level

Ist Teil von

• 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.588-589

Ort / Verlag

IEEE

Erscheinungsjahr

2005

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Two methods of predicting device lifetime for fast reliability evaluation are demonstrated. These methods are based on direct correlation using breakdown signature parameters. The first method is based on the correlation between voltage data from a ramped voltage stress (RVS) test and lifetime data from a time dependent dielectric breakdown (TDDB) test. The second method uses a homogeneous correlation technique using near-time-zero leakage current data and the corresponding lifetime data, both from the same TDDB test. There have been some findings indicating that these correlation techniques may provide a promising way for fast reliability evaluation without a TDDB test.