Details

Autor(en) / Beteiligte

• Kubena, R.L.
• Lee, J.Y.
• Jullens, R.A.
• Brault, R.G.
• Middleton, P.L.
• Stevens, E.H.

Titel

Si MOSFET fabrication using focused ion beams

Ist Teil von

• 1983 International Electron Devices Meeting, 1983, p.566-569

Ort / Verlag

IRE

Erscheinungsjahr

1983

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Submicrometer focused ion beams have been used both for the maskless ion implantation of p-channel depletion-mode Si MOSFETs and for the gate lithography of n-channel enhancement-mode Si MOSFETs. B-Pt and Au-Si liquid-metal-alloy ion sources were utilized in a single-lens focusing column for the implantation and lithography steps, respectively. An 800-Å-thick Al stopping layer was used at the target to separate the lighter ions from the heavier ion species in the beams. Reasonable dc electrical characteristics were measured for the chosen device process parameters.