Details

Autor(en) / Beteiligte

• Lee, S.H.
• Hwang, Y.N.
• Lee, S.Y.
• Ryoo, K.C.
• Ahn, S.J.
• Koo, H.C.
• Jeong, C.W.
• Kim, Y.-T.
• Koh, G.H.
• Jeong, G.T.
• Jeong, H.S.
• Kinam Kim

Titel

Full integration and cell characteristics for 64Mb nonvolatile PRAM

Ist Teil von

• Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.20-21

Ort / Verlag

IEEE

Erscheinungsjahr

2004

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18/spl mu/m-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns.