Details

Autor(en) / Beteiligte

• Roth, K.
• Goldschmidt, J.C.
• Puzzer, T.
• Chuangsuwanich, N.
• Vogl, B.
• Aberle, A.G.

Titel

Structural properties of polycrystalline silicon seed layers made on glass by solid-phase crystallisation

Ist Teil von

• 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, 2003, Vol.2, p.1202-1205 Vol.2

Ort / Verlag

IEEE

Erscheinungsjahr

2003

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We made high-quality n/sup +/-doped polycrystalline silicon (poly-Si) thin-films on glass for a prospective use as seed layers for subsequent epitaxial growth of poly-Si thin-film solar cells. The seed layers are less than 200 nm thick, have a grain size of up to 2 /spl mu/m, and were made from PECVD-deposited phosphorus-doped a-Si precursor layers that were thermally crystallised ("solid-phase crystallisation", SPC) at about 600/spl deg/C using various temperature-time profiles. In this paper we present the structural properties of these SPC poly-Si films on glass, as determined by transmission electron microscopy and focussed ion beam investigations.