Details

Autor(en) / Beteiligte

• Sandha, G.S.
• Singh, P.K.
• Nagchoudhuri, D.

Titel

FTGMOS: A novel feedback thermal gradient MOS circuit model

Ist Teil von

• 2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668), 2003, p.387-390

Ort / Verlag

IEEE

Erscheinungsjahr

2003

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A novel hardware implementable model for MOS devices in an integrated circuit is proposed that negates the thermal effects. It applies a correction to the device whose magnitude varies in accordance with the amount of error introduced in the device due to thermal gradient. This model introduces corrections by a suitable circuit external to the device. The FTGMOS model can be applied to all the devices in an integrated circuit to obtain the circuit performance as if thermal effects are absent altogether.