Details

Autor(en) / Beteiligte

• Lin, K.-W.
• Chen, H.-I.
• Chuang, H.-M.
• Chen, C.-Y.
• Lu, C.-T.
• Cheng, C.-C.
• Liu, W.-C.

Titel

Characteristics of Pd/InGaP Schottky diodes hydrogen sensors

Ist Teil von

• IEEE sensors journal, 2004-02, Vol.4 (1), p.72-79

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2004

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Pd/InGaP hydrogen sensors based on the metal-oxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H/sub 2//air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.