Details

Autor(en) / Beteiligte

• Gao, Q.
• Tan, H.H.
• Jagadish, C.
• Sun, B.Q.
• Gal, M.
• Ouyang, L.
• Zou, J.

Titel

Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures

Ist Teil von

• 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2002, p.247-250

Ort / Verlag

IEEE

Erscheinungsjahr

2002

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 /spl mu/m InGaAsN quantum well structure are also presented.