Details

Autor(en) / Beteiligte

• Ahmed, K.Z.
• Kraus, P.A.
• Olsen, C.
• Hung, S.
• Nouri, F.

Titel

Observation of nitrogen-enhanced doping deactivation at the polysilicon-oxynitride interface of pMOSFETs with 12-/spl Aring/ gate dielectrics

Ist Teil von

• IEEE electron device letters, 2003-07, Vol.24 (7), p.445-447

Ort / Verlag

IEEE

Erscheinungsjahr

2003

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This letter reports the observation of a process integration issue that arises when large doses of nitrogen (>1/spl times/10/sup 15/ cm/sup -2/) are incorporated in oxynitride gate dielectric films targeting equivalent oxide thickness of 11-13 /spl Aring/. It is shown that capacitance-extracted active doping density at the polysilicon/oxynitride (poly/SiON) interface of boron-doped p/sup +/-polysilicon gated pMOSFETs decreases with increasing nitrogen dose of the oxynitride film as measured by X-ray photoelectron spectroscopy. A physical mechanism is proposed to explain experimental observations.