Details

Autor(en) / Beteiligte

• Tanzi, N.
• Dykstra, J.
• Hutchinson, K.

Titel

A 1-Watt doubly balanced 5GHz flip-chip SiGe power amplifier

Ist Teil von

• IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003, 2003, p.141-144

Ort / Verlag

IEEE

Erscheinungsjahr

2003

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• A doubly balanced 5GHz flip-chip SiGe power amplifier with Low Temperature Co-Fired Ceramic (LTCC) matching networks is described. A doubly balanced amplifier features two balanced amplifiers connected in a push-pull configuration using 180-degree hybrids. The amplifier achieves a saturated output power and power added efficiency (PAE) of 31.5dBm and 24% respectively. At its 1dB compression point, the amplifier delivers 29.6dBm to a 50/spl Omega/ load, and has a PAE of 18.5%. At 5GHz, the amplifier's small-signal gain is 20.6dB, with input and output return losses in excess of 10dB. The amplifier's 1dB power bandwidth is 700MHz.