Details

Autor(en) / Beteiligte

• Christiansen, K.
• McNelis, L.
• Hofeldt, J.
• Williams, D.M.
• Deufel, M.
• Schmitz, D.
• Heuken, M.

Titel

Highly carbon doped InGaAs grown in an AIX 2600G3 Multiwafer Planetary Reactor/spl reg

Ist Teil von

• International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.418-420

Ort / Verlag

IEEE

Erscheinungsjahr

2003

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The growth of highly carbon doped lattice matched InGaAs grown on semi-insulating InP is investigated in an AIX 2600G3 Multiwafer Planetary Reactor/spl reg/. A systematical investigation of the dependency of growth temperature, V/III ratio and doping concentration was conducted using CBr/sub 4/ as C precursor and AsH/sub 3/ as group V source. Subsequent to the growth an in-situ anneal step with TMAs was applied to activate carriers in the InGaAs layer. The highest achieved p-type carrier concentration is 6/spl times/10/sup 19/ cm/sup -3/ grown at 440/spl deg/C with a V/III ratio of 1.5. The layers were investigated by XRD, sheet resistance- and Hall-effect measurements.