Details

Autor(en) / Beteiligte

• Lin, B.J.F.
• Luechinger, H.
• Kocot, C.P.
• Littau, E.
• Stout, C.
• McFarland, B.
• Rohdin, H.
• Kofol, J.S.
• Jaeger, R.P.
• Mars, D.E.

Titel

A 1- mu m MODFET process yielding MUX and DMUX circuits operating at 4.5 Gb/s

Ist Teil von

• 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988, 1988, p.143-146

Ort / Verlag

IEEE

Erscheinungsjahr

1988

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• The authors report a high-yield 1- mu m enhancement- and depletion-mode MODFET (E/D MODFET) process capable of producing medium-scale integrated circuits. Special care has been taken to reduce anomalous transients. Reproducible MBE (molecular-beam epitaxy) growth of epi-layers and a uniform and reproducible RIE (reactive ion etch) process have resulted in excellent threshold voltage (V/sub TH/) control. The standard deviation of V/sub TH/ for EFETs with a median V/sub TH/ value of 0.27 V was 42 mV from wafer to wafer and 21 mV across a wafer. With this process the authors have demonstrated a stand-alone general-purpose 8-bit multiplexer and demultiplexer pair operating at 4.5 Gb/s with a power consumption of 1.4 W and 2.2 W, respectively.< >