Details

Autor(en) / Beteiligte

• Dutta, N.
• Wright, P.
• Nelson, R.
• Wilson, R.
• Besomi, P.

Titel

InGaAsP laser with high T0

Ist Teil von

• IEEE journal of quantum electronics, 1982-10, Vol.18 (10), p.1414-1416

Ort / Verlag

IEEE

Erscheinungsjahr

1982

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We report measured T 0 values as high as 127 K for 1.3 μm InGaAsP buried heterostructure lasers. An analysis of the electrical characteristics of high T 0 lasers indicates the presence of shunt leakage currents. The actual T 0 of the current flowing through the active layer junction is shown to be 70 ± 10 K. The observed reduction in threshold temperature sensitivity may be useful in some applications.