Details

Autor(en) / Beteiligte

• Liu, Zhenyu
• Su, Jiangtao
• Li, Haode
• Shao, Shiyuan
• Wu, Zhihao

Titel

A Novel Digital Two-Tone Load-Pull Architecture for Assessing RF Device Nonlinear Behavior

Ist Teil von

• 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2024, Vol.1, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2024

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• A method to characterize the nonlinear effects of an RF device under a two-tone stimulus using the digital load-pull technique is presented. Instead of using a mechanical load-pull tuner, a digital microprocessor-based active load-pull architecture is implemented, which provides precise and rapid control over impedance at two separate frequencies simultaneously. By setting the load impedance of a Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) device load impedance at the two-tone frequency separately, the relationship between nonlinear performance and associated device load impedance variations was investigated. This approach yields a better understanding of the RF device's nonlinear behavior, particularly within the context of modern wireless communication systems.