Details

Autor(en) / Beteiligte

• Malavena, Gerardo
• Amoroso, Salvatore M.
• Brown, Andrew R.
• Asenov, Plamen
• Lin, Xi-Wei
• Moroz, Victor
• Giulianini, Mattia
• Refaldi, David
• Monzio Compagnoni, Christian
• Spinelli, Alessandro S.

Titel

Discrete-Trap Effects on 3-D NAND Variability - Part I: Threshold Voltage

Ist Teil von

• IEEE journal of the Electron Devices Society, 2024, Vol.12, p.651-657

Ort / Verlag

IEEE

Erscheinungsjahr

2024

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• In this two-part article we discuss the difference between a continuous and a discrete approach to trap modeling in the simulation of 3-D NAND Flash memories with polysilicon channel. In Part I we focus on threshold voltage <inline-formula> <tex-math notation="LaTeX">({\mathrm { V}}_{\mathrm { T}}) </tex-math></inline-formula> fluctuations induced by traps and show that lower values for the average and rms <inline-formula> <tex-math notation="LaTeX">{\mathrm { V}}_{\mathrm { T}} </tex-math></inline-formula> arise when the discrete nature of traps is accounted for. We explain such differences in terms of a stronger percolation that leads to a lower number of filled traps in the discrete-trap case, and investigate such differences as a function of cell parameters and temperature. Finally, we compare the two approaches showing that a continuous trap model cannot reproduce the correct dependences resulting from a discrete treatment.