Details

Autor(en) / Beteiligte

• Kwon, Youngjae
• Koo, Won-Tae
• Park, Sangsu
• Suh, Dong Ik
• Lee, Gunhee
• Lee, Hyung Dong
• Ahn, Youngbae
• Kim, Dohee
• Ryu, Seungwook
• Em, Hoseok
• Kang, Seokjoon
• Jeong, Chang Won
• Cheon, Junho
• Choi, Hyejung
• Kim, Soo Gil
• Lee, Seho
• Yi, Jaeyun
• Cha, Seon Yong

Titel

Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays

Ist Teil von

• 2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2024

Link zum Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Non-volatile memory-based analog computation-in-memory can improve energy efficiency and latency of artificial intelligence edge devices by minimizing the movement of data between processors and memories. Here, we developed reliable HfO 2 -based resistive synaptic cell (RSC) arrays with 16-level analog properties. We revealed that oxygen diffusion barriers not only suppress the negative-set phenomenon and but also improve retention properties. In addition, we fully integrated 256Kcell 1T1R cross-bar RSC arrays using a conventional CMOS process, and demonstrated their improved multiply-accumulate operations with ~94% accuracy.